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| 1T413 Variable Capacitance Diode Description The 1T413 is a variable capacitance diode designed for the digital cellular phone VCO using a super-small-miniature flat package (SSVC). Features * Super-small-miniature flat package * Low series resistance: 0.40 Max. (f=470 MHz) * Large capacitance ratio: 2.90 Typ. (C1/C4) * Small leakage current: 10 nA Max. (VR=15 V) Applications Digital cellular phone VCO Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 15 * Operating temperature Topr -20 to +75 * Storage temperature Tstg -65 to +150 V C C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Symbol IR C1 C4 C1/C4 rs Conditions VR=15 V VR=1 V, f=1 MHz VR=4 V, f=1 MHz VR=1 V, f=470 MHz Min. 15.0 5.1 2.5 Typ. Max. 10.0 17.5 6.1 0.40 (Ta=25 C) Unit nA pF pF 2.9 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E99220-TE 1T413 Example of Representative Characteristics Diode capacitance vs. Reverse voltage 100 Ta=25C 50 C-Diode capacitance (pF) Reverse current vs. Ambient temperature VR=15V 20 10 IR-Reverse current (pA) 0.1 0.2 0.5 1 2 5 10 VR-Reverse voltage (V) 10 5 2 1 1 0.1 -20 0 20 40 60 80 Ta-Ambient temperature (C) Forward voltage vs. Ambient temperature 0.90 VR-Reverse voltage (V) VF-Forward voltage (V) IF=1mA 0.80 35 Reverse voltage vs. Ambient temperature IR=10A 30 0.70 25 0.60 -20 0 20 40 60 80 20 -20 0 20 40 60 80 Ta-Ambient temperature (C) Ta-Ambient temperature (C) --2-- 1T413 Diode capacitance vs. Ambient temperature 1.03 C (Ta)/C (25C)-Diode capacitance VR=1V VR=2V VR=3V Temperature coefficient (ppm/C) 2000 Temperature coefficient of diode capacitance 1.02 VR=4V 1.01 VR=10V 1.00 1000 500 200 100 0.99 50 0.98 -20 0 20 40 60 80 30 0.1 0.2 0.5 1.0 2.0 5.0 10.0 20.0 Ta-Ambient temperature (C) VR-Reverse voltage (V) Reverse current vs. Reverse voltage 100 0.5 Series resistance vs. Reverse voltage f=470MHz 0.4 Ta=80C 10 rs-Series resistance () 0.3 IR-Reverse current (pA) 0.2 Ta=60C 0.1 1 0.0 0.1 1 VR-Reverse voltage (V) 10 Ta=25C 0.1 1 3 10 30 VR-Reverse voltage (V) --3-- 1T413 Package Outline Unit : mm M-290 1.3 0.1 A 1.7 0.1 0.8 0.1 0.2 M A 10 MAX b c 10 MAX 0.7 0.1 BASE METAL WITH PLATING c b 0.11 0.005 0.3 0.025 + 0.11 - 0.05 0.01 + 0.05 0.3 - 0.02 PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.002g Mark 1 X3 1F Cathode 2F Anode 2 --4-- 0.2 0.05 |
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